Fermi-Level Pinning at Metal/High-k Interface Influenced by Electron State Density of Metal Gate---- Author(s): Yang, ZC (Yang, Z. C.); Huang, AP (Huang, A. P.); Zheng, XH (Zheng, X. H.); Xiao, ZS (Xiao, Z. S.); Liu, XY (Liu, X. Y.); Zhang, XW (Zhang, X. W.); Chu, PK (Chu, Paul K.); Wang, WW (Wang, W. W.) Title: Fermi-Level Pinning at Metal/High-k Interf
NMOS transistors that mitigate fermi-level pinning by employing a hafnium-silicon gate electrode and NMOS transistors that mitigate fermi-level pinning by employing a hafnium-silicon gate electrode and high-k gate dieletric ... The Fermi-pinning effect of high k gate dielectric materials causes a threshold voltage shift and low mobility, due to the incre
Gate Stacks With High-k Dielectrics and Metal Electrodes: Fermi Level Pinning and Dipoles Induced by Manhong Zhang, Ph.D.: studied high-k gate dielectrics and metal gate electrodes at University of Texas at Austin, Texas, United States. Professor at Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China. Current research is high-k die
Theory of Fermi Level Pinning of High-k Dielectrics - IEEE Xplore Fermi-level pinning of poly-Si and metal-silicide gate materials on Hf-based gate dielectrics has been systematically ...
High-k/Metal Gate Technology 9 Jan 2008 ... Too large high-k cause significant short channel effect ..... Flat-band shift due to Fermi Level Pinning.
Presentation Fermi level pinning and mobility degradation. 12. Conclusions. New Materials for the Gate Stack of MOS-Transistors. 2 ...
the role of metal \ high-k dielectric interfaces in ... - Sematech Leading material for high performance applications (k=20-25) ... ϕ. CNL. Effective workfunction & Fermi level pinning ...
Effects of high-k gate dielectric materials on metal and silicon gate ... high- dielectrics differ appreciably from their values on SiO2 or in a vacuum. We also .... illustrates the case where the metal Fermi level is above ... 2(a) illustrates the varying degrees of pinning of metal ...
Slides High threshold voltage because of Fermi level pinning at poly-Si/High-K interface ; Degraded channel carrier mobility.
Theory of Fermi Level Pinning of High-k Dielectrics - ResearchGate ABSTRACT Fermi-level pinning of poly-Si and metal-silicide gate materials on Hf -based gate dielectrics has been ...
